BSM50GD60DLC Infineon Technologies, BSM50GD60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM50GD60DLC
• Description: IGBT Modules 600V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
20
Eon
Eoff
Erec
5
BSM 50 GD 60 DLC
40
6 (8)
R
I
C
G
E
10
I
[A]
C
[ ]
= 50A , V
on
E
= f (R
R
G,on
on
= f (I
= 2,7
CE
60
= 300V , T
G
), E
C
= = = = R
), E
off
G,off
= f (R
vj
= 2,7 , V
off
= 125°C
= f (I
15
G
), E
CC
C
80
), E
= 300V, T
rec
Eon
Eoff
Erec
rec
= f (R
= f (I
vj
= 125°C
G
C
)
)
BSM 50 GD 60 DLC
100
20