BSM200GA170DLC Infineon Technologies, BSM200GA170DLC Datasheet - Page 6

• Manufacturer Part Number: BSM200GA170DLC
• Description: IGBT Modules N-CH 1.7KV 400A
• Manufacturer: Infineon Technologies

Specifications of BSM200GA170DLC

• Configuration: Single Dual Emitter
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
350
300
250
200
150
100
250
200
150
100
50
50
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
50
5
100
Eoff
Eon
Erec
10
BSM 200 GA 170 DLC
150
Eoff
Eon
Erec
15
E
on
R
gon
200
= f (I
6(8)
= R
R
I
E
C
goff
G
C
20
[A]
on
[ ]
) , E
I
=7,5 , V
C
= 200A , V
= f (R
250
off
CE
= f (I
G
= 900V, T
CE
) , E
25
= 900V , T
C
300
) , E
off
j
= 125°C
= f (R
rec
j
= 125°C
30
= f (I
350
G
) , E
C
)
rec
35
400
= f (R
G
)
BSM200GA170DLC
450
40