MT46H64M16LFCK-5:A Micron Technology Inc, MT46H64M16LFCK-5:A Datasheet - Page 75

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MT46H64M16LFCK-5:A

Manufacturer Part Number
MT46H64M16LFCK-5:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H64M16LFCK-5:A

Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
130mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H64M16LFCK-5:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 39: WRITE-to-READ – Interrupting
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
CK
4
5
4
5
4
5
WRITE
Bank a,
Col b
T0
Notes:
t
t
t
1,2
DQSS
DQSS
DQSS
1. An interrupted burst of 4 is shown; 2 data elements are written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3.
4. DQS is required at T2 and T2n (nominal case) to register DM.
5. D
D
b
IN
t
NOP
WTR is referenced from the first positive CK edge after the last data-in pair.
D
T1
IN
b
IN
b = data-in for column b; D
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+1
D
IN
NOP
T2
t
WTR
T2n
3
75
Bank a,
READ
Col n
T3
OUT
n = data-out for column n.
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
T4
Don’t Care
CL = 3
CL = 3
CL = 3
T5
NOP
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
n
OUT
n
OUT
n
T6
NOP
D
n + 1
D
n + 1
D
n + 1
OUT
OUT
T6n
OUT

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