MT48LC16M4A2P-75 IT:G Micron Technology Inc, MT48LC16M4A2P-75 IT:G Datasheet - Page 34

• Manufacturer Part Number: MT48LC16M4A2P-75 IT:G
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M4A2P-75 IT:G

• Organization: 16Mx4
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Power-Down
Figure 24:
Figure 25:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
Terminating a WRITE Burst
PRECHARGE Command
Note:
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND
INHIBIT when no accesses are in progress. If power-down occurs when all banks are
idle, this mode is referred to as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred to as active power-down. Entering
power-down deactivates the input and output buffers, excluding CKE, for maximum
power savings while in standby. The device may not remain in the power-down state
longer than the refresh period (
performed in this mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE
HIGH at the desired clock edge (meeting
COMMAND
A0–A9
BA0,1
RAS#
CAS#
ADDRESS
WE#
CKE
CLK
A10
CS#
DQMs are LOW.
CLK
TRANSITIONING DATA
DQ
HIGH
VALID ADDRESS
BANK,
WRITE
COL n
D
T0
n
IN
TERMINATE
Bank Selected
BURST
T1
All Banks
ADDRESS
BANK
DON’T CARE
COMMAND
(ADDRESS)
(DATA)
NEXT
T2
34
DON’T CARE
t
REF or
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
REF
t
CKS). See Figure 26 on page 35.
AT
) since no refresh operations are
64Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands