STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet

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STL160N3LLH6

Manufacturer Part Number
STL160N3LLH6
Description
MOSFET N-CH 30V 160A POWERFLAT56
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STL160N3LLH6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.3 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
61.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
6375pF @ 25V
Power - Max
80W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11204-2

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Features
1. The value is rated according R
Application
Switching applications
Description
The STL160N3LLH6 is a N-channel 30 V Power
MOSFET. This product utilizes the 6
of design rules of ST’s proprietary STripFET™
technology, with a new gate structure.The
resulting Power MOSFET exhibits the lowest
R
Table 1.
November 2010
DS(on)
STL160N3LLH6
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Order code
DS(on)
STL160N3LLH6
Order code
in all packages.
* Q
Device summary
g
industry benchmark
V
30 V
DSS
N-channel 30 V, 0.0011 Ω , 35 A PowerFLAT™ (5x6)
thj-pcb
0.0013 Ω
R
max
DS(on)
STripFET™ VI DeepGATE™ Power MOSFET
160N3LLH6
DS(on)
Marking
th
generation
35 A
Doc ID 18223 Rev 1
I
D
(1)
Figure 1.
PowerFLAT™ (5x6)
Package
Internal schematic diagram
PowerFLAT™ ( 5x6 )
STL160N3LLH6
Tape and reel
Packaging
www.st.com
1/14
14

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STL160N3LLH6 Summary of contents

Page 1

... High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description The STL160N3LLH6 is a N-channel 30 V Power MOSFET. This product utilizes the 6 of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all packages ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 18223 Rev 1 STL160N3LLH6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL160N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (3) P Total dissipation at T TOT ...

Page 4

... 4 Parameter Test conditions f=1 MHz = =4 (see Figure 14) f=1 MHz gate DC bias = 0 test signal level = 20 mV open drain Doc ID 18223 Rev 1 STL160N3LLH6 Min. Typ 250 µ 17.5 A 0.0011 0.0013 D = 17.5 A 0.0016 0.0020 D Min. Typ. Max. 6375 - 1230 675 = 1.4 Max. Unit ...

Page 5

... STL160N3LLH6 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Tc=25°C Single pulse 10ms 100ms (V) DS Figure 5. AM08600v1 140 120 100 3V 2.0 2 temperature Figure 7. AM08602v1 R DS(on) 1.15 1.10 1.05 1.00 0.95 T (°C) 125 175 J Doc ID 18223 Rev 1 STL160N3LLH6 Thermal impedance Transfer characteristics I D ( Static drain-source on resistance (Ω) V =10V AM08601v1 ...

Page 7

... STL160N3LLH6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =35A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1.0 0.8 0.6 0.4 0.2 -75 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 0.7 0.6 0.5 0 AM08604v1 C (pF) 9000 8000 7000 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18223 Rev 1 STL160N3LLH6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL160N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 9. PowerFLAT 5x6 mechanical data_subcontractor Dim Min. Typ. ...

Page 10

... Package mechanical data Figure 19. PowerFLAT 5x6 drawing_subcontractor 10/14 Doc ID 18223 Rev 1 STL160N3LLH6 ...

Page 11

... STL160N3LLH6 Table 10. PowerFLAT 5x6 mechanical data_ST Dim Figure 20. PowerFLAT 5x6 drawing_ST mm Min. Typ. 0.80 0.02 0.25 0.30 5.20 6.15 4.11 3.50 1.27 0.65 0.715 1.05 Doc ID 18223 Rev 1 Package mechanical data Max. 1.00 0.05 0.50 4.31 3.70 1.015 1.35 11/14 ...

Page 12

... Package mechanical data Figure 21. Recommended footprint 12/14 Doc ID 18223 Rev 1 STL160N3LLH6 AM08614v1 ...

Page 13

... STL160N3LLH6 5 Revision history Table 11. Document revision history Date 10-Nov-2010 Revision 1 First release. Doc ID 18223 Rev 1 Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 18223 Rev 1 STL160N3LLH6 ...

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