STL26NM60N STMicroelectronics, STL26NM60N Datasheet

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STL26NM60N

Manufacturer Part Number
STL26NM60N
Description
MOSFET N-CH 600V 19A POWERFLAT
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STL26NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
185 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 50V
Power - Max
125mW
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11207-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL26NM60N
Manufacturer:
ST
0
Company:
Part Number:
STL26NM60N
Quantity:
100
Features
1. The value is rated according to R
Application
Switching applications
Description
This device is made using the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
February 2011
STL26NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Type
STL26NM60N
Order code
Device summary
N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ (8x8) HV
V
T
650 V
DSS
Jmax
ultra low gate charge MDmesh™ II Power MOSFET
@
< 0.185 Ω
thj-case
R
DS(on)
max
26NM60N
Marking
19 A
Doc ID 18472 Rev 1
I
D
(1)
Figure 1.
PowerFLAT™ (8x8) HV
Package
Internal schematic diagram
STL26NM60N
Tape and reel
Packaging
www.st.com
1/13
13

Related parts for STL26NM60N

STL26NM60N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code STL26NM60N February 2011 R DS(on max ( thj-case Figure 1. Marking 26NM60N PowerFLAT™ (8x8) HV Doc ID 18472 Rev 1 STL26NM60N Internal schematic diagram Package Packaging Tape and reel 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 18472 Rev 1 STL26NM60N ...

Page 3

... STL26NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (2),(3) I Drain current (pulsed) DM (3) P Total dissipation at T TOT (1) P Total dissipation at T TOT ...

Page 4

... MHz open drain V = 480 (see Figure 14) DSS Doc ID 18472 Rev 1 Min. Typ 600 =125 ° 250 µ 0.160 Min. Typ. 1800 - 115 1 310 8.5 30 STL26NM60N Max. Unit V 1 µA 100 µA 100 Ω 0.185 Max. Unit Ω oss ...

Page 5

... STL26NM60N Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... V (V) 100 DS 10 Figure 5. vs temperature Figure 7. AM08988v1 R DS(on) (Ω) 0.168 0.166 0.164 0.162 0.160 0.158 0.156 0.154 0.152 75 T (°C) 100 J Doc ID 18472 Rev 1 STL26NM60N Thermal impedance Zth PowerFLAT 8x8 HV 0.2 0.1 0.05 0.02 0. Transfer characteristics Static drain-source on resistance V =10V (s) ...

Page 7

... STL26NM60N Figure 8. Gate charge vs gate-source voltage Figure (V) V =480V =19A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =250µA 1.10 D 1.00 0.90 0.80 0.70 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.4 T =-50°C J 1.2 1.0 0.8 0.6 T =150°C J 0.4 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18472 Rev 1 STL26NM60N 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL26NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. PowerFLAT™ 8x8 HV mechanical data Dim Min. ...

Page 10

... Package mechanical data Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data PIN#1 ID 0.08 C 10/13 e BOTTOM VIEW b D2 INDEX AREA TOP VIEW Doc ID 18472 Rev 1 STL26NM60N D SIDE VIEW SEATING PLANE AM05542v1 ...

Page 11

... STL26NM60N Figure 20. PowerFLAT™ 8x8 HV recommended footprint 7.30 2.00 1.05 Doc ID 18472 Rev 1 Package mechanical data AM05543v1 11/13 ...

Page 12

... Revision history 5 Revision history Table 9. Document revision history Date 14-Feb-2011 12/13 Revision 1 First release Doc ID 18472 Rev 1 STL26NM60N Changes ...

Page 13

... STL26NM60N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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