STP52N25M5 STMicroelectronics, STP52N25M5 Datasheet

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STP52N25M5

Manufacturer Part Number
STP52N25M5
Description
MOSFET N-CH 250V 28A TO220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP52N25M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 50V
Power - Max
110W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11233-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP52N25M5
Manufacturer:
ST
0
Features
Application
Description
This devices is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
July 2010
STP52N25M5
Amongst the best R
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
STP52N25M5
Type
Order code
Device summary
250 V
V
DS(on)
DSS
* area
< 0.065 Ω
R
max
DS(on)
52N25M5
Marking
N-channel 250 V, 0.055 Ω , 28 A, TO-220
Doc ID 17776 Rev 1
28 A
I
D
Figure 1.
MDmesh
Package
TO-220
Internal schematic diagram
TM
TO-220
V Power MOSFET
STP52N25M5
1
2
3
Packaging
Tube
www.st.com
1/12
12

Related parts for STP52N25M5

STP52N25M5 Summary of contents

Page 1

... Table 1. Device summary Order code STP52N25M5 July 2010 N-channel 250 V, 0.055 Ω TO-220 MDmesh R DS(on max < 0.065 Ω Figure 1. Marking 52N25M5 Doc ID 17776 Rev 1 STP52N25M5 TM V Power MOSFET TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 17776 Rev 1 STP52N25M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP52N25M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not-repetitive I AR (pulse width limited by T Single pulse avalanche energy E AS (starting T ...

Page 4

... Figure 14) Doc ID 17776 Rev 1 Min. Typ 250 =125 ° 100 µ 0.055 Min. Typ. 1770 - 110 178 - while V is rising from 0 oss DS while V is rising from 0 oss DS STP52N25M5 Max. Unit V 1 µA 100 µA 100 Ω 0.065 Max. Unit Ω ...

Page 5

... STP52N25M5 Table 6. Switching times Symbol t Voltage delay time d(V) t Voltage rise time r(V) t Current fall time f(i) t Crossing time c(off) Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Static drain-source on resistance Doc ID 17776 Rev 1 STP52N25M5 ...

Page 7

... STP52N25M5 Figure 8. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Normalized B VDSS Figure 9. Figure 11. Normalized on resistance vs vs temperature Doc ID 17776 Rev 1 Electrical characteristics Output capacitance stored energy temperature 7/12 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 17776 Rev 1 STP52N25M5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STP52N25M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17776 Rev 1 Package mechanical data ® 9/12 ...

Page 10

... Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 17776 Rev 1 STP52N25M5 mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 ...

Page 11

... STP52N25M5 5 Revision history Table 8. Document revision history Date 29-Jul-2010 Revision 1 First release Doc ID 17776 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17776 Rev 1 STP52N25M5 ...

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