STP52N25M5 STMicroelectronics, STP52N25M5 Datasheet
STP52N25M5
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STP52N25M5 Summary of contents
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... Table 1. Device summary Order code STP52N25M5 July 2010 N-channel 250 V, 0.055 Ω TO-220 MDmesh R DS(on max < 0.065 Ω Figure 1. Marking 52N25M5 Doc ID 17776 Rev 1 STP52N25M5 TM V Power MOSFET TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 17776 Rev 1 STP52N25M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STP52N25M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not-repetitive I AR (pulse width limited by T Single pulse avalanche energy E AS (starting T ...
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... Figure 14) Doc ID 17776 Rev 1 Min. Typ 250 =125 ° 100 µ 0.055 Min. Typ. 1770 - 110 178 - while V is rising from 0 oss DS while V is rising from 0 oss DS STP52N25M5 Max. Unit V 1 µA 100 µA 100 Ω 0.065 Max. Unit Ω ...
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... STP52N25M5 Table 6. Switching times Symbol t Voltage delay time d(V) t Voltage rise time r(V) t Current fall time f(i) t Crossing time c(off) Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Static drain-source on resistance Doc ID 17776 Rev 1 STP52N25M5 ...
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... STP52N25M5 Figure 8. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Normalized B VDSS Figure 9. Figure 11. Normalized on resistance vs vs temperature Doc ID 17776 Rev 1 Electrical characteristics Output capacitance stored energy temperature 7/12 ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 17776 Rev 1 STP52N25M5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STP52N25M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17776 Rev 1 Package mechanical data ® 9/12 ...
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... Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 17776 Rev 1 STP52N25M5 mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 ...
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... STP52N25M5 5 Revision history Table 8. Document revision history Date 29-Jul-2010 Revision 1 First release Doc ID 17776 Rev 1 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17776 Rev 1 STP52N25M5 ...