BSP52 NXP Semiconductors, BSP52 Datasheet - Page 2

• Manufacturer Part Number: BSP52
• Manufacturer: NXP Semiconductors

Specifications of BSP52

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 90V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 1.9@0.5mA@500mAV
• Collector-emitter Saturation Voltage: 1.3@0.5mA@500mAV
• Collector Current (dc) (max): 1A
• Dc Current Gain: 1000@150mA@10V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 23
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BSP50
BSP51
BSP52
BSP50
BSP51
BSP52
PARAMETER
2
PINNING
open emitter
V
open collector
T
amb
BE
Top view
PIN
2,4
CONDITIONS
Fig.1 Simplified outline (SOT223) and symbol.
1
3
= 0
≤ 25 °C; note 1 −
1
base
collector
emitter
2
4
BSP50; BSP51; BSP52
3
MAM265
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
1
60
80
90
45
60
80
5
1
2
100
1.25
+150
150
+150
Product data sheet
MAX.
3
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
.
UNIT
2, 4