BAT18 NXP Semiconductors, BAT18 Datasheet

Planar high-performance band-switching diode in a small rectangular SOT23 SMD plastic package

BAT18

Manufacturer Part Number
BAT18
Description
Planar high-performance band-switching diode in a small rectangular SOT23 SMD plastic package
Manufacturer
NXP Semiconductors
Type
Switchr
Datasheet

Specifications of BAT18

Configuration
Single
Forward Current
100mA
Forward Voltage
1.2V
Operating Temperature Classification
Military
Reverse Voltage
35V
Package Type
SOT-23
Mounting
Surface Mount
Maximum Series Resistance @ Maximum If
0.7@5mAOhm
Operating Temperature (max)
125C
Pin Count
3
Lead Free Status / Rohs Status
Compliant

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1. Product profile
2. Pinning information
3. Ordering information
1.1 General description
1.2 Features
1.3 Applications
Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic
package.
Table 1:
Table 2:
Pin
1
2
3
Type number
BAT18
BAT18
Silicon planar diode
Rev. 02 — 31 August 2004
Continuous reverse voltage: max. 35 V
Continuous forward current: max. 100 mA
Low diode capacitance: max. 1.0 pF
Low diode forward resistance: max. 0.7 .
Band switching.
Pinning
Ordering information
Description
anode
not connected
cathode
Package
Name
-
Description
plastic surface mounted package; 3 leads
Simplified outline
1
Product data sheet
3
2
Symbol
1
3
Version
SOT23
sym044
2

Related parts for BAT18

BAT18 Summary of contents

Page 1

... Low diode capacitance: max. 1.0 pF Low diode forward resistance: max. 0.7 . 1.3 Applications Band switching. 2. Pinning information Table 1: Pin Ordering information Table 2: Type number BAT18 Pinning Description anode not connected cathode Ordering information Package Name Description - plastic surface mounted package; 3 leads Product data sheet Simplifi ...

Page 2

... Rev. 02 — 31 August 2004 Silicon planar diode [1] Conditions Min - - 55 - Conditions Min Figure Figure 3 - Figure 4 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. BAT18 Max Unit 35 V 100 mA +125 C 125 C Typ Unit 330 K/W [1] 500 K/W Typ Max Unit - 1.2 V ...

Page 3

... Fig 2. Reverse current as a function of junction 001aab167 (V) R Fig 4. Diode forward resistance as a function of Rev. 02 — 31 August 2004 Silicon planar diode 120 temperature (mA 200 MHz forward current; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. BAT18 001aab166 (1) (2) 160 001aab168 ...

Page 4

... REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 31 August 2004 Silicon planar diode detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. BAT18 SOT23 ISSUE DATE 97-02-28 99-09- ...

Page 5

... Product data sheet Data sheet status Change notice Product data sheet - 3: marking code changed. Product specification - Rev. 02 — 31 August 2004 BAT18 Silicon planar diode Doc. number Supersedes 9397 750 13385 BAT18_1 not applicable - © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 6

... Rev. 02 — 31 August 2004 BAT18 Silicon planar diode © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 7

... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands BAT18 Silicon planar diode Date of release: 31 August 2004 Document number: 9397 750 13385 ...

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