MT36HTS1G72PY-667A1 Micron Technology Inc, MT36HTS1G72PY-667A1 Datasheet
MT36HTS1G72PY-667A1
Specifications of MT36HTS1G72PY-667A1
Related parts for MT36HTS1G72PY-667A1
MT36HTS1G72PY-667A1 Summary of contents
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... MT36HTJ51272 – 4GB MT36HTS51272(P) – 4GB MT36HTS1G72(P) – 8GB For the latest data sheets, refer to Micron’s Web site: Features • 240-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • Densities – 4GB (512 Meg x 72) • ...
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... Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters - 4GB (HTJ) Modules Base device: MT47H512M4SBT 2 Part Number MT36HTJ51272Y-53E__ MT36HTJ51272Y-40E__ Table 4: Part Numbers and Timing Parameters - 4GB (HTS) Modules ...
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Pin Assignments and Descriptions Table 6: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 ...
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... PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA0–BA2) or all device banks (A10 HIGH). The address inputs also provide the op- code during a LOAD MODE command. 4GB modules are addressed by A0–A13; 8GB modules by A0–A14, and A15 is required for register parity function. ...
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Functional Block Diagram Figure 2: Functional Block Diagram Rank 0 = U1b–U5b, U9b–U16b, U18b–U22b Rank 1 = U1t–U5t, U9t–U16t, U18t–U22t U7 SPD EEPROM SCL SDA SA0 SA1 SA2 SS U6, U17 ...
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... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
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... Electrical Specifications Stresses greater than those listed in Table 8, may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...
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... DD HIGH HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition, all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef822553c2/Source: 09005aef822553af HTJ_S36C512_1Gx72 ...
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... Table 11: DDR2 I Specifications and Conditions – 4GB (HTS) Module DD Values shown for MT47H512M4 DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (512 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current RAS = RAS MIN ( commands ...
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... Table 12: DDR2 I Specifications and Conditions – 8GB Module DD Values shown for MT47H1GM4 DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (1 Gig x 4) component data sheet Parameter/Condition Operating one bank active-precharge current RAS = RAS MIN ( commands; Address bus inputs are switching; Data bus inputs are switching ...
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... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR2 SDRAM registered DIMMs. These are meant subset of the param- eters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. ...
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Table 14: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V V Input voltage (limits high-level input voltage DC low-level input voltage V Input differential-pair cross V voltage ...
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Serial Presence-Detect Table 16: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...
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... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...
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... SPD revision 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD PDF: 09005aef822553c2/Source: 09005aef822553af HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN ...
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... Table 18: Serial Presence-Detect Matrix – 4GB (continued) Byte 95–98 Module serial number 99–127 Reserved for manufacturer-specific data 128–255 Reserved for customer-specific data Notes: 1. The DDR2 device specification is PDF: 09005aef822553c2/Source: 09005aef822553af HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN 4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM ...
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... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...
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... SPD revision 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99– ...
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... TYP 10.00 (0.394) TYP PIN 120 U21 U22 PIN 121 ©2003 Micron Technology, Inc. All rights reserved. ‘HTJ’ Module 7.12 (0.2803) MAX 1.37 (0.054) 1.17 (0.046) ‘HTS’ Module 4.0 (0.157) MAX 1.37 (0.054) 1.17 (0.046) ...