DG442DY-E3 Siliconix / Vishay, DG442DY-E3 Datasheet - Page 4

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DG442DY-E3

Manufacturer Part Number
DG442DY-E3
Description
Switch; SPST; 16-Pin Narrow SOIC; 50 Ohms (Typ.); 0.01 nA (Typ.); 30 mA
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet

Specifications of DG442DY-E3

Charge Injection
1 pC
Current, Source, Off-state
0.50 nA
Number Of Channels
4
Package
16-Pin SOIC N
Package Type
16-Pin SOIC N
Power Consumption
200.000 μW
Primary Type
Analog
Resistance, Drain To Source On
50 Ohms
Switch Type
SPST
Time, Turn-on
150 ns
Voltage, Supply
44
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
DG441/442
Vishay Siliconix
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
IN
= input voltage to perform proper function.
e
a
FOR SINGLE SUPPLY
V
Symbol
r
ANALOG
DS(on)
I
t
t
GND
OFF
ON
Q
I+
I-
C
Unless Otherwise Specified
L
I
= 1nF, V
S
R
= - 10 mA, V
V+ = 13.2 V, V- = 0 V
V+ = 12 V, V- = 0 V
L
V
Test Conditions
= 1 kΩ, C
IN
V
See Figure 2
V+ = 10.8 V
IN
= 2.4 V, 0.8 V
gen
V
= 0 or 5 V
S
=
= 6 V, R
8
D
L
V
= 35 pF
=
3
gen
V, 8 V
f
= 0 Ω
Temp
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
b
- 0.0001
Typ
100
300
- 15
60
15
2
c
- 55 to 125 °C
Min
- 100
- 100
- 1
0
A Suffix
d
Max
160
200
450
200
100
12
S-71241–Rev. I, 25-Jun-07
Document Number: 70053
d
Min
- 100
- 100
- 40 to 85 °C
- 1
0
D Suffix
d
Max
160
200
450
200
100
12
d
Unit
pC
µA
ns
V
Ω

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