SUD23N06-31L-E3 Siliconix / Vishay, SUD23N06-31L-E3 Datasheet

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SUD23N06-31L-E3

Manufacturer Part Number
SUD23N06-31L-E3
Description
N-CH 60-V (D-S) 175 C MOSFET LOGIC
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SUD23N06-31L-E3

Channel Type
N
Current, Drain
19.5 A
Fall Time
40 ns
Gate Charge, Total
17 nC
Operating And Storage Temperature
–55 to +175 °C
Package Type
TO-252
Polarization
N-Channel
Power Dissipation
100 W
Resistance, Drain To Source On
0.045 Ohm
Resistance, Thermal, Junction To Case
4 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
52 °C/W
Time, Rise
25 ns
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
20 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Diode Forward
1.5 V
Voltage, Drain To Source
60 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD23N06-31L-E3
Manufacturer:
INTEL
Quantity:
8 729
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
60
(V)
Ordering Information: SUD23N06-31L
G
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
Top View
TO-252
D
0.045 at V
0.031 at V
S
r
DS(on)
J
= 175 °C)
SUD23N06-31L-E3 (Lead (Pb)-free)
a
Drain Connected to Tab
GS
GS
(Ω)
= 4.5 V
= 10 V
b
C
I
D
19.5
= 25 °C, unless otherwise noted
23
(A)
a
Steady State
T
L = 0.1 mH
T
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
J
V
E
I
I
P
, T
DM
D
S
I
I
AS
thJA
thJC
GS
AS
D
S
D
®
stg
Power MOSFET
Typical
3.2
18
40
- 55 to 175
Limit
SUD23N06-31L
± 20
16.5
100
23
50
23
20
20
3
a
Maximum
Vishay Siliconix
22
50
4
www.vishay.com
RoHS*
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
Available
1

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SUD23N06-31L-E3 Summary of contents

Page 1

... GS 60 0.045 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD23N06-31L SUD23N06-31L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Avalanche Energy (Duty Cycle ≤ ...

Page 2

... SUD23N06-31L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Drain Current (A) D Transconductance 1000 800 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 72145 S-71660-Rev. C, 06-Aug- °C 125 ° iss SUD23N06-31L Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.10 0. 0.02 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SUD23N06-31L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 2.0 1.5 1.0 0.5 0 Junction T emperature ( °C) J On-Resistance vs. Junction Temperature www.vishay.com 4 100 10 100 125 150 175 T = 150 ° ° 0.3 0.6 0.9 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72145 S-71660-Rev. C, 06-Aug-07 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72145. Document Number: 72145 S-71660-Rev. C, 06-Aug-07 100 125 150 175 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD23N06-31L Vishay Siliconix 100 *r Limited DS(on °C C Single Pulse 0.1 0.1 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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