SUP65P06-20-E3 Siliconix / Vishay, SUP65P06-20-E3 Datasheet
SUP65P06-20-E3
Manufacturer Part Number
SUP65P06-20-E3
Description
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.02 Ohm; ID -65A; TO-220AB; PD 250W; VGS +/-20
Manufacturer
Siliconix / Vishay
Datasheet
1.SUP65P06-20-E3.pdf
(2 pages)
Specifications of SUP65P06-20-E3
Current, Drain
-65 A
Gate Charge, Total
85 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
0.02 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
65 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
25 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Forward, Diode
-1.1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUP65P06-20-E3
Manufacturer:
VISHAY
Quantity:
1 200
Notes:
a.
b.
c.
d.
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Case
J
Package limited.
Duty cycle v 1%.
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
= 175_C)
V
(BR)DSS
–60
TO-220AB
SUP65P06-20
Top View
G D S
(V)
b
DRAIN connected to TAB
r
P-Channel 60-V (D-S), 175_C MOSFET
DS(on)
0.020
Parameter
Parameter
(W)
T
C
= 25_C (TO-220AB and TO-263)
T
PCB Mount (TO-263)
Free Air (TO-220AB)
A
= 125_C (TO-263)
T
L = 0.1 mH
I
T
D
C
–65
C
= 125_C
(A)
= 25_C
a
SUB65P06-20
_
Top View
TO-263
G
D
c
c
S
Symbol
Symbol
T
R
R
R
J
V
E
I
I
P
, T
DM
thJA
thJA
thJC
I
AR
GS
AR
D
D
stg
G
SUP/SUB65P06-20
P-Channel MOSFET
–55 to 175
Limit
Limit
Vishay Siliconix
–200
"20
–65
250
62.5
S
D
–39
–60
180
3.7
0.6
40
a
d
Unit
Unit
_C/W
mJ
_C
W
V
A
2-1
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SUP65P06-20-E3 Summary of contents
Page 1
... P-Channel 60-V (D-S), 175_C MOSFET V (V) r (W) (BR)DSS DS(on) –60 0.020 TO-220AB DRAIN connected to TAB Top View SUP65P06-20 Parameter Gate-Source Voltage Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
SUP/SUB65P06-20 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c ...