SUD40N04-10A-E3 Siliconix / Vishay, SUD40N04-10A-E3 Datasheet
SUD40N04-10A-E3
Manufacturer Part Number
SUD40N04-10A-E3
Description
MOSFET; N-Ch; VDSS 40V; RDS(ON) 0.0075Ohm; ID 40A; TO-252; PD 71W; VGS +/-20V; gFS 40S
Manufacturer
Siliconix / Vishay
Datasheet
1.SUD40N04-10A-E3.pdf
(2 pages)
Specifications of SUD40N04-10A-E3
Current, Drain
40 A
Gate Charge, Total
35 nC
Package Type
TO-252
Polarization
N-Channel
Power Dissipation
71 W
Resistance, Drain To Source On
0.0075 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
40 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD40N04-10A-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
d.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Case
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
Surface mounted on 1” FR4 board.
(BR)DSS
40
(V)
d
J
b
0.010 @ V
0.014 @ V
= 175_C)
SUD40N04-10A
Order Number:
r
Parameter
Parameter
N-Channel 40-V (D-S), 175_C MOSFET
G
DS(on)
Top View
_
TO-252
D
GS
GS
(W)
= 10 V
= 4.5 V
S
Drain Connected to Tab
I
D
40
40
(A)
Steady State
t v 10 sec.
T
L = 0.1 mH
T
T
New Product
C
C
C
a
= 100_C
= 25_C
= 25_C
_
Symbol
Symbol
T
R
R
V
J
V
E
I
I
thJA
thJC
P
, T
I
DM
AR
DS
GS
AR
D
D
stg
G
N-Channel MOSFET
Typical
D
S
1.75
15
40
–55 to 175
Limit
"20
100
40
40
71
SUD40N04-10A
40
30
45
a
a
c
Vishay Siliconix
Maximum
2.1
18
50
Unit
Unit
_C/W
mJ
C/W
_C
W
V
A
1
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SUD40N04-10A-E3 Summary of contents
Page 1
... Surface mounted on 1” FR4 board. New Product Drain Connected to Tab _ Symbol 25_C 100_C 0 25_C stg Symbol sec. R thJA Steady State R thJC SUD40N04-10A Vishay Siliconix D S N-Channel MOSFET Limit 40 " 100 –55 to 175 Typical Maximum 1.75 2.1 Unit Unit _C/W C/W 1 ...
Page 2
... SUD40N04-10A Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...