DG611DY-E3 Siliconix / Vishay, DG611DY-E3 Datasheet

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DG611DY-E3

Manufacturer Part Number
DG611DY-E3
Description
Switch, Analog; SPST; SOIC; 2 Ohms; 0.001 nA; 0.001 nA; -0.3 to 21 V
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet
1.DG611DY-E3.pdf (10 pages)

Specifications of DG611DY-E3

Charge Injection
7 pC
Current, Source, Off-state
0.25 nA
Number Of Channels
4
Package
16-Pin SOIC N
Package Type
16-Pin SOIC N
Primary Type
Analog
Resistance, Drain To Source On
18 Ohms
Switch Type
SPST
Time, Turn-on
12 ns
Voltage, Supply
21
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been
minimized to optimize performance in fast sample-and-hold
applications.
Each switch conducts equally well in both directions when on
and blocks up to 16 V
minimized to ensure fast switching and low-glitch energy. To
achieve such fast and clean switching performance, the
DG611/612/613 are built on the Vishay Siliconix proprietary
D/CMOS process. This process combines n-channel DMOS
switching FETs with low-power CMOS control logic and
drivers. An epitaxial layer prevents latchup.
The DG611 and DG612 differ only in that they respond to
opposite logic levels. The versatile DG613 has two normally
open and two normally closed switches. It can be given
various configurations, including four SPST, two SPDT, one
DPDT.
For additional information see Applications Note AN207
(FaxBack number 70605).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70057
S-71155–Rev. H, 11-Jun-07
GND
IN
IN
D
V-
D
S
S
1
1
1
4
4
4
1
2
3
4
5
6
7
8
Dual-In-Line
and SOIC
Top View
DG611
High-Speed, Low-Glitch D/CMOS Analog Switches
p-p
16
15
14
13
12
10
11
9
when off. Capacitances have been
IN
D
S
V+
V
S
D
IN
2
L
3
2
3
2
3
GND
NC
V-
S
S
Key
1
4
4
5
6
7
8
3
9
D
D
4
1
10
2
IN
IN
DG611
4
Top View
1
11 12 13
1
LCC
NC IN
NC IN
20
3
2
19
D
D
3
2
18
17
16
15
14
FEATURES
BENEFITS
APPLICATIONS
• Fast Switching - t
• Low Charge Injection:
• Wide Bandwidth: 500 MHz
• 5 V CMOS Logic Compatible
• Low r
• Low Quiescent Power : 1.2 nW
• Single Supply Operation
• Improved Data Throughput
• Minimal Switching Transients
• Improved System Performance
• Easily Interfaced
• Low Insertion Loss
• Minimal Power Consumption
• Fast Sample-and-Holds
• Synchronous Demodulators
• Pixel-Rate Video Switching
• Disk/Tape Drives
• DAC Deglitching
• Switched Capacitor Filters
• GaAs FET Drivers
• Satellite Receivers
S
V+
NC
V
S
2
L
3
DS(on)
Four SPST Switches per Package
Logic "0" ≤ 1 V
Logic "1" ≥ 4 V
TRUTH TABLE
: 18 Ω
Logic
0
1
ON
: 12 ns
±
2 pC
DG611/612/613
DG611
OFF
ON
Vishay Siliconix
www.vishay.com
DG612
OFF
ON
RoHS*
COMPLIANT
Available
Pb-free
1

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DG611DY-E3 Summary of contents

Page 1

High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. Each switch conducts equally well in both directions when on and blocks up to ...

Page 2

... Four SPST Switches per Package TRUTH TABLE Logic OFF 1 ON Logic "0" ≤ Logic "1" ≥ Part Number DG611DJ DG611DJ-E3 DG612DJ DG612DJ-E3 DG611DY DG611DY-E3 DG611DY-T1 DG611DY-T1-E3 DG612DY DG612DY-E3 DG612DY-T1 DG612DY-T1-E3 DG613DJ DG613DJ-E3 DG613DY DG613DY-E3 DG613DY-T1 DG613DY-T1-E3 Document Number: 70057 S-71155–Rev. H, 11-Jun- OFF ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter GND V- to GND V to GND Continuous Current (Any Terminal) Current (Pulsed at 1 µ ...

Page 4

DG611/612/613 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Analog Switch e V Analog Signal Range ANALOG r Switch On-Resistance DS(on) Δr Resistance Match Bet Ch. I Source Off Leakage I Drain Off Leakage Current I Switch On Leakage Current Digital Control ...

Page 5

SPECIFICATIONS FOR UNIPOLAR SUPPLIES Parameter Symbol Analog Switch e V Analog Signal Range ANALOG r Switch On-Resistance DS(on) Dynamic Characteristics e Turn-On Time e Turn-Off Time Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = ...

Page 6

DG611/612/613 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted – Logic Supply Voltage (V) L Input Switching Threshold vs. V ...

Page 7

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 120 100 - Off Isolation - – Frequency (MHz) Crosstalk and Off Isolation ...

Page 8

DG611/612/613 Vishay Siliconix TEST CIRCUITS + GND - 3 V Figure 3. Charge Injection APPLICATIONS High-Speed Sample-and-Hold In a fast sample-and-hold application, the analog switch ...

Page 9

APPLICATIONS Background 75 Ω Titles 75 Ω Figure 7. A High-Speed GaAs FET Driver that Saves Power Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology ...

Page 10

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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