DG413DJ-E3 Siliconix / Vishay, DG413DJ-E3 Datasheet

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DG413DJ-E3

Manufacturer Part Number
DG413DJ-E3
Description
Switch; High Speed DG413 IN Plastic DIP-16
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet
1.DG413DJ-E3.pdf (9 pages)

Specifications of DG413DJ-E3

Charge Injection
5 pC
Current, Source, Off-state
0.25 nA
Number Of Channels
4
Package
16-Pin PDIP
Package Type
16-Pin PDIP
Power Consumption
0.350 μW
Primary Type
Analog
Resistance, Drain To Source On
35 Ohms
Switch Type
SPST
Time, Turn-on
175 ns
Voltage, Supply
44
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
suited for portable and battery powered industrial and
military applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411 and DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
GND
GND
IN
IN
V-
IN
IN
D
S
S
D
D
V-
D
S
S
1
1
1
4
4
4
1
1
1
4
4
4
Dual-In-Line and SOIC
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
Dual-In-Line and SOIC
Precision Monolithic Quad SPST CMOS Analog Switches
DG411
Top View
Top View
DG413
ON
: 110 ns), the DG411 family is ideally
16
15
14
13
12
11
10
9
16
15
14
13
12
10
11
9
IN
D
S
V+
V
S
D
IN
2
L
3
2
3
IN
D
S
V+
V
S
D
IN
2
3
2
2
L
3
3
2
3
GND
GND
NC
V-
S
S
NC
V-
S
S
1
4
Key
1
4
Key
4
5
6
7
8
4
5
6
7
8
3
9
D
D
3
9
1
4
D
D
1
4
10
2
IN
IN
10
2
IN
IN
1
4
Top View
DG411
11
1
1
4
LCC
NC IN
NC IN
Top View
DG413
11
1
LCC
NC IN
NC IN
20
12
20
12
2
3
19
13
2
3
D
D
2
3
19
13
D
D
2
3
18
17
16
15
14
18
17
16
15
14
FEATURES
BENEFITS
APPLICATIONS
S
V+
NC
V
S
• 44 V Supply Max Rating
• ± 15 V Analog Signal Range
• On-Resistance - r
• Fast Switching - t
• Ultra Low Power - P
• TTL, CMOS Compatible
• Single Supply Capability
• Widest Dynamic Range
• Low Signal Errors and Distortion
• Break-Before-Make Switching Action
• Simple Interfacing
• Precision Automatic Test Equipment
• Precision Data Acquisition
• Communication Systems
• Battery Powered Systems
• Computer Peripherals
2
L
3
S
V+
NC
V
S
2
L
3
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
TRUTH TABLE
TRUTH TABLE
Logic
Logic
0
1
0
1
ON
DS(on)
: 110 ns
D
: 0.35 µW
: 25 Ω
SW
DG411/412/413
DG411
OFF
OFF
ON
1
ON
, SW
Vishay Siliconix
4
www.vishay.com
SW
DG412
OFF
OFF
ON
ON
2
, SW
RoHS*
COMPLIANT
Available
Pb-free
3
1

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DG413DJ-E3 Summary of contents

Page 1

Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (t : 110 ...

Page 2

... Package Part Number DG411DJ DG411DJ-E3 DG412DJ DG412DJ-E3 DG411DY DG411DY-E3 DG411DY-T1 DG411DY-T1-E3 DG412DY DG412DY-E3 DG412DY-T1 DG412DY-T1-E3 DG413DJ DG413DJ-E3 DG413DY DG413DY-E3 DG413DY-T1 DG413DY-T1-E3 Limit 44 25 (GND - 0.3) to (V+) + 0 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 600 900 900 Document Number: 70050 S-71241– ...

Page 3

SPECIFICATIONS Parameter Symbol Analog Switch e V Analog Signal Range ANALOG Drain-Source r DS(on) On-Resistance I S(off) Switch Off Leakage Current I D(off) I Channel On Leakage Current D(on) Digital Control Input Current, V Low Input ...

Page 4

DG411/412/413 Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES Parameter Symbol Analog Switch e V Analog Signal Range ANALOG Drain-Source r DS(on) On-Resistance Dynamic Characteristics t Turn-On Time ON t Turn-Off Time OFF Break-Before-Make t D Time Delay Charge Injection Q Power ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ° S(off ...

Page 6

DG411/412/413 Vishay Siliconix TYPICAL CHARACTERISTICS 100 mA SCHEMATIC DIAGRAM (TYPICAL CHANNEL GND V- TEST CIRCUITS + ± GND - 15 V ...

Page 7

TEST CIRCUITS + GND - (includes fixture and stray capacitance ...

Page 8

DG411/412/413 Vishay Siliconix + Ω 2.4 V GND - 15 V Off Isolation = 20 log Bypass Figure 6. ...

Page 9

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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