SUD50N06-08H-E3 Siliconix / Vishay, SUD50N06-08H-E3 Datasheet
SUD50N06-08H-E3
Specifications of SUD50N06-08H-E3
Related parts for SUD50N06-08H-E3
SUD50N06-08H-E3 Summary of contents
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... DS DS(on) 60 0.0078 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N06-08H—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse ...
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... SUD50N06-08H Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...
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... V − Drain-to-Source Voltage (V) DS Document Number: 73160 S-42243—Rev. A, 13-Dec-04 New Product 100 0.015 25_C 0.012 125_C 0.009 0.006 0.003 0.000 SUD50N06-08H Vishay Siliconix Transfer Characteristics 125_C C 20 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − Drain Current (A) ...
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... SUD50N06-08H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 125 100 75 50 Limited by Package 100 T − Case Temperature (_C Duty Cycle = 0.5 ...