SUM110N06-3M9H-E3 Siliconix / Vishay, SUM110N06-3M9H-E3 Datasheet
SUM110N06-3M9H-E3
Manufacturer Part Number
SUM110N06-3M9H-E3
Description
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.00325Ohm; ID 110A; TO-263; PD 375W; VGS +/-20V
Manufacturer
Siliconix / Vishay
Datasheet
1.SUM110N06-3M9H-E3.pdf
(2 pages)
Specifications of SUM110N06-3M9H-E3
Application
Automotive such as high-side switch, motor drives, 12 V battery
Channel Type
N-Channel
Current, Drain
110 A
Fall Time
14 nS
Gate Charge, Total
200 nC
Mounting And Package Type
PCB Mount and TO-263
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-263
Polarization
N-Channel
Power Dissipation
375 W
Resistance, Drain To Source On
0.00325 Ohm
Resistance, Thermal, Junction To Case
0.4 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
40 °C⁄W
Time, Rise
160 nS
Time, Turn-off Delay
75 ns
Time, Turn-on Delay
45 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free)
60
(V)
0.0039 at V
G
Top View
TO-263
D
r
DS(on)
S
J
b
N-Channel 60-V (D-S) 175 °C MOSFET
GS
= 175 °C)
(Ω)
= 10 V
I
PCB Mount
110
D
(A)
a
C
Q
= 25 °C, unless otherwise noted
T
T
L = 0.1 mH
T
T
C
A
d
g
C
C
200
= 125 °C
= 25 °C
(Typ)
= 25 °C
= 25 °C
d
FEATURES
Symbol
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• High Threshold Voltage At High Temperature
• 100 % R
R
R
thJC
thJA
Symbol
T
J
V
V
E
I
g
I
P
, T
DM
I
AS
GS
DS
AS
D
D
Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
SUM110N06-3m9H
Limit
0.4
40
- 55 to 175
D
S
Limit
± 20
110
110
375
3.75
440
245
60
70
a
a
c
Vishay Siliconix
°C/W
Unit
Unit
RoHS
mJ
COMPLIANT
°C
W
V
A
1
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SUM110N06-3M9H-E3 Summary of contents
Page 1
... DS(on) 0.0039 TO-263 Top View Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... SUM110N06-3m9H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance c Total Gate Charge ...