SI2306BDS-T1-E3 Siliconix / Vishay, SI2306BDS-T1-E3 Datasheet

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... V (V) R (Ω) DS DS(on) 0.047 0.065 4 Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si2306BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73234 S-80642-Rev. B, 24-Mar-08 400 350 300 250 200 150 100 °C J 0.8 1.0 1.2 Si2306BDS Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 1.4 1.2 1.0 0.8 0 ...

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... Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...