SUD08P06-155L-E3 Siliconix / Vishay, SUD08P06-155L-E3 Datasheet
SUD08P06-155L-E3
Manufacturer Part Number
SUD08P06-155L-E3
Description
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 28mohm, Id -8.4A, TO-263, Pd 2W
Manufacturer
Siliconix / Vishay
Datasheet
1.SUD08P06-155L-E3.pdf
(2 pages)
Specifications of SUD08P06-155L-E3
Application
Automotive such as high-side switch, motor drives, 12 V battery
Channel Type
P-Channel
Current, Drain
-8.4 A
Fall Time
7 nS
Gate Charge, Total
12.5 nC
Mounting And Package Type
Surface Mount and TO-252
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-252
Polarization
P-Channel
Power Dissipation
25 W
Resistance, Drain To Source On
0.125 Ohm
Resistance, Thermal, Junction To Case
5 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
20 °C⁄W
Time, Rise
14 nS
Time, Turn-off Delay
15 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Forward, Diode
-0.9 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD08P06-155L-E3
Manufacturer:
Maxim
Quantity:
26
Notes:
a. See SOA curve for voltage derating.
b. Surface Mounted on 1" x 1" FR-4 boad.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuing Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
- 60
DS
(V)
Ordering Information: SUD08P06-155L-E3 (Lead (Pb)-free)
0.280 at V
0.155 at V
b
r
G
DS(on)
Top View
TO-252
GS
D
GS
J
P-Channel 60-V (D-S), 175 °C MOSFET
= 175 °C)
(Ω)
= - 4.5 V
= - 10 V
S
Drain Connected to Tab
I
D
- 8.4
- 7.4
(A)
C
= 25 °C, unless otherwise noted
Q
g
12.5
(Typ)
New Product
Steady State
T
L = 0.1 mH
T
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Rated Maximum Junction Temperature
P-Channel MOSFET
G
Symbol
Symbol
T
R
R
J
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
GS
D
S
AS
D
®
stg
Power MOSFETS
S
D
Typical
20
62
5
- 55 to 175
SUD08P06-155L
Limit
- 8.4
- 8.4
± 20
- 18
- 12
25
7.2
- 6
2
b
a
Maximum
Vishay Siliconix
25
75
6
°C/W
Unit
Unit
mJ
RoHS
°C
COMPLIANT
W
V
A
1
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SUD08P06-155L-E3 Summary of contents
Page 1
... 0.280 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD08P06-155L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuing Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...
Page 2
... SUD08P06-155L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...