6ED003L06-F Infineon Technologies, 6ED003L06-F Datasheet - Page 4

• Manufacturer Part Number: 6ED003L06-F
• Description: MOSFET & Power Driver ICs Integrated 3 Phse IGBT Control
• Manufacturer: Infineon Technologies

Specifications of 6ED003L06-F

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.2 Description
1
1.1 Features
• Thin-film-SOI-technology
• Insensitivity of the bridge output to negative transient voltages up to -50V
• Maximum blocking voltage +600V
• Power supply of the high side drivers via boot strap
• Separate control circuits for all six drivers
• CMOS and LSTTL compatible input (negative logic)
• Signal interlocking of every phase to prevent cross-conduction
• Detection of over-current and under-voltage supply
• 'shut down' of all switches during error conditions
• externally programmable delay for fault clear after over current detection
The device 6ED003L06-F is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-
phase systems with a maximum blocking voltage of +600V. Based on the used SOI-technology there is an
excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.
Hence, no parasitic latch up may occur at all temperature and voltage conditions.
Figure 1: Typical Application
The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals,
down to 3.3V logic. The device includes an under-voltage detection unit with hysterese characteristic and an
over-current detection. The over-current level is adjusted by choosing the resistor value and the threshold
level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut-down off all
six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-
current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of
2.8 µA. Therefore, the resistor R
pull-up and 250mA for pull down. Because of system safety reasons a 380ns interlocking time has been
realised. The function of input EN can optionally be extended with an over-temperature detection, using an
external NTC-resistor (see Fig.1). There are parasitic diode structures between pins VCC and VBx due to
the monolithic setup of the IC, but external bootstrap diodes are still mandatory.
Datasheet
given by SOI-technology
Overview
HIN1,2,3
LIN1,2,3
FAULT
VCC
VSS
EN
5V / 3.3V
R
NTC
RCIN
is optional. The minimum output current can be given with 120mA for
C
R
RCIN
RCIN
EN
RCIN
ITRIP
VSS
VCC
HIN1,2,3
FAULT
LIN1,2,3
4
HO1,2,3
VS1,2,3
VB1,2,3
LO1,2,3
Integrated 3 Phase Gate Driver
COM
DC-Bus
PG-DSO28-17
6ED003L06-F
Rev. 2, Dec 2008
To Load