BUK7Y10-30B NXP Semiconductors, BUK7Y10-30B Datasheet
BUK7Y10-30B
Specifications of BUK7Y10-30B
Related parts for BUK7Y10-30B
BUK7Y10-30B Summary of contents
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... BUK7Y10-30B N-channel TrenchMOS standard level FET Rev. 03 — 9 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B Graphic symbol mbb076 Version © NXP B.V. 2010. All rights reserved ...
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... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B Min Typ Max - - - 268 - - 85 -55 - 175 -55 - 175 - - 67 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac491 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK7Y10-30B Product data sheet = Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET 003aad628 = 10 μ 100 μ 100 (V) DS Min Typ - - ...
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... Figure see Figure MHz °C; see Figure Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B Min Typ Max 4 0. 500 - 2 100 - 2 100 - - 887 1183 - 332 ...
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... GS 5.9V 5.5V 5.1V 4. (V) DS Fig 7. 003aad624 25 ° (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET 100 4.7V 5.1V 5. Drain-source on-state resistance as a function of drain current; typical values (S) 15 ...
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... T (°C) j Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET min typ max 003aad630 © NXP B.V. 2010. All rights reserved. ...
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... Q (nC) G Fig 15. Input, output and reverse transfer capacitances ( 175 °C 25 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET function of drain-source voltage; typical values. 003aad625 0 ( 003aad627 C iss ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET detail (1) (1) ( 5.0 3.3 6.2 ...
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... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B Supersedes BUK7Y10-30B_2 BUK7Y10-30B_1 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 April 2010 BUK7Y10-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 April 2010 Document identifier: BUK7Y10-30B ...