PMV32UP NXP Semiconductors, PMV32UP Datasheet
PMV32UP
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PMV32UP Summary of contents
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... PMV32UP P-channel Trench MOSFET Rev. 1 — 11 March 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V drain-source on-state resistance rated 1.3 Applications ...
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... Product data sheet Simplified outline SOT23 (TO-236AB) Description plastic surface-mounted package; 3 leads Marking code NF% All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET Graphic symbol 017aaa094 Version SOT23 [1] © NXP B.V. 2011. All rights reserved ...
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... Min - -8 [ °C - [1] = 100 °C - ≤ 10 µ [ -55 -55 -65 [1] - 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature PMV32UP Max Unit - -2.5 A -16 A 510 mW 930 mW 4150 mW 150 °C 150 °C 150 ° 017aaa124 125 175 T (°C) j © NXP B.V. 2011. All rights reserved. ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm PMV32UP Product data sheet 1 2 Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET 017aaa139 (1) (2) (3) (4) (5) (6) ...
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... FR4 PCB, mounting pad for drain 6 cm Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV32UP Product data sheet – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET 017aaa140 (s) p 017aaa141 ...
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... 150 ° -2 -2 ° -1 -1 ° -2 ° - -4 ° - MHz ° Ω - G(ext ° -2 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET Min Typ Max - -0.45 -0.7 -0. - -100 - 1890 - - 175 - - 112 - - ...
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... DSon (Ω) 0.15 0.10 0.05 0.00 0.0 –1.0 –2.0 – 150 ° °C j Drain-source on-state resistance as a function of gate-source voltage; typical values PMV32UP 017aaa143 (3) –0.8 –1.0 V (V) GS 017aaa145 (1) (2) –4.0 –5.0 V (V) GS © NXP B.V. 2011. All rights reserved ...
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... T (° MHz; V (1) C (2) C (3) C Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET 017aaa147 0 60 120 T 017aaa149 (1) (2) (3) –1 –1 – ...
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... Product data sheet 017aaa150 (nC °C amb Fig 15. Gate charge waveform definitions – (A) –12 (1) –8 –4 –0 –0.2 –0.4 –0.6 –0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa151 (2) –1.0 – ...
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... scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ISSUE DATE ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date PMV32UP v.1 20110311 PMV32UP Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 PMV32UP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV32UP All rights reserved. Date of release: 11 March 2011 Document identifier: PMV32UP ...