PTFB211803FL V2 R250 Infineon Technologies, PTFB211803FL V2 R250 Datasheet

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PTFB211803FL V2 R250

Manufacturer Part Number
PTFB211803FL V2 R250
Description
RF MOSFET Power RF LDMOS FETs 180W 2110-2170 MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB211803FL V2 R250

Lead Free Status / Rohs Status
No
Other names
FB211803FLV2R25NT
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal perform-
ance and superior reliability.
RF Characteristics
Two-carrier WCDMA Measurements
V
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
-20
-25
-30
-35
-40
-45
-50
-55
-60
DQ
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
V
31
DD
Two-carrier WCDMA 3GPP Drive-up
= 1.3 A, P
= 30 V, I
33
CASE
35
DQ
OUT
37
Output Power (dBm)
= 1.30 A, ƒ = 2170 MHz, 3GPP
IMD Up
= 25°C unless otherwise indicated
BW 3.84 MHz
= 40 W average, ƒ
39
41
Efficiency
IMD Low
43
(not subject to production test–verified by design/characterization in Infineon test fixture)
45
ACPR
47
1
= 2135 MHz, ƒ
49
40
35
30
25
20
15
10
5
0
1 of 14
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
Symbol
PTFB211803EL
H-33288-6
PTFB211803FL
H-34288-4/2
Features
ACPR
G
h
Broadband internal matching
Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efficiency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Integrated ESD protection.
Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
Pb-free and RoHS compliant
ps
D
Min
1dB
Typ
17.5
29.5
–38
= 180 W
PTFB211803EL
PTFB211803FL
Rev. 05, 2010-11-10
Max
Unit
dBc
dB
%

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PTFB211803FL V2 R250 Summary of contents

Page 1

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz ...

Page 2

... W CW) CASE Ordering Information Type and Version Package Type PTFB211803EL V1 H-33288-6 PTFB211803EL V1 R250 H-33288-6 PTFB211803FL V2 H-34288-4/2 PTFB211803FL V2 R250 H-34288-4/2 Data Sheet (tested in Infineon test fixture) = 2165 MHz, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 1 2 Symbol Conditions Symbol ...

Page 3

Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP 1.30 A, ƒ = 2170 MHz, 3GPP DD DQ WCDMA, PAR = 8 dB, 10 MHz carrier spacing, ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive- 1. ƒ = 2170 MHz, ƒ = 2169 MHz Gain 17 16 Efficiency ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Gain & Efficiency vs. Output Power 1.30 A, ƒ = 2170 MHz Gain 16 +25°C 15 +85°C Efficiency –10° ...

Page 6

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source G Z Source W Frequency MHz R 2200 2.02 –6.03 2170 2.12 –6.26 2140 2.23 –6.50 2110 2.34 –6.75 2080 2.47 –7.01 See next page for reference circuit information Data Sheet ...

Page 7

Confidential, Limited Internal Distribution Reference Circuit Out NC NC C801 1000 pF C803 R805 1000 pF 1200 Ohm R801 1300 Ohm ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB211803EL or PTFB211803FL PCB 0.508 mm [.020"] thick, Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Input 0.053 λ, 6.67 W TL101 TL102, TL103 0.019 λ, 54.17 W 0.000 λ, ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Output TL201 0.001 λ, 5.33 W TL202 TL203 0.047 λ, 47.12 W 0.044 λ, 39.51 W TL204 TL205 0.054 λ, 4.84 W TL206, TL207 ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB211803EF Find Gerber files for this test fixture on the Infineon Web site at RO4350, .020 R804 C802 C801 S4 R802 R803 S2 R102 C103 C102 ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Components Information Component Description Input C101, C106, C107 Chip capacitor,10 pF C102, C105 Chip capacitor, 0.1 μF C103, C104 Chip capacitor, 4.71 μF C108 Chip capacitor, 2.1 pF C801, C802, C803 Capacitor, 1000 ...

Page 12

Confidential, Limited Internal Distribution Package Outline Specifications 4X R1.524 [R.060] 2X R1.626 [R.064] 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. ...

Page 13

Confidential, Limited Internal Distribution Package Outline Specifications 45° X 2.032 [45° X .080] 2X 30° +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME ...

Page 14

... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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