PTFB211803FL V2 R250 Infineon Technologies, PTFB211803FL V2 R250 Datasheet - Page 12

• Manufacturer Part Number: PTFB211803FL V2 R250
• Description: RF MOSFET Power RF LDMOS FETs 180W 2110-2170 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB211803FL V2 R250

• Lead Free Status / Rohs Status: No
• Other names: FB211803FLV2R25NT

Confidential, Limited Internal Distribution
Package Outline Specifications
Data Sheet
[.062] (SPH)
1.575
4X R1.524
2X R1.626
[R.060]
[R.064]
1.016
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: A = gate, B = source, C = drain, D = V
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
4X 30°
45° X 2.032
[45° X .080]
V
E
Package H-33288-6
22.352±.200
[.880±.008]
2X 22.860
2X 12.700
[.900]
[.045] (4 PLS)
[.500]
12 of 14
4X 1.143
L C
C L
34.036
[1.340]
G
D
27.940
[1.100]
H - 3 3288 - 6_ po _02 - 1 8 - 2010
V
F
DD
, E, F = N.C.
[.200] (2 PLS)
S
2X 5.080
C L
9.398
[.370]
4.039
[ .159
9.779
[.385]
+. 010
4.889±.510
+.254
–. 005
[.192±.020]
–. 127
PTFB211803EL
PTFB211803FL
]
Rev. 05, 2010-11-10
19.558±.510
[.770±.020]