PTFB212503FL V2 R250 Infineon Technologies, PTFB212503FL V2 R250 Datasheet

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PTFB212503FL V2 R250

Manufacturer Part Number
PTFB212503FL V2 R250
Description
RF MOSFET Power RF LDMOS FETs 240W 2110-2170 MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB212503FL V2 R250

Lead Free Status / Rohs Status
No
Other names
FB212503FLV2R25NT
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
Confidential, Limited Internal Distribution
RF Characteristics
Two-carrier WCDMA Specifications
fixture)
V
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
-15
-20
-25
-30
-35
-40
-45
-50
-55
32
V
DQ
10 MHz carrier spacing, BW 3.84 MHz
DD
34
Two-carrier WCDMA Drive-up
= 30 V, I
= 1.85 A, P
36
3GPP signal, PAR = 8 dB,
ACPR
IMD Low
IMD Up
Efficiency
CASE
Output Power (dBm)
38
DQ
= 1.85 A, ƒ = 2170 MHz,
OUT
40
= 25°C unless otherwise indicated
42
= 55 W average, ƒ
44
46
(not subject to production test—verified by design/characterization in Infineon test
48
50
1
= 2160 MHz, ƒ
40
35
30
25
20
15
10
5
0
1 of 14
PTFB212503FL
Package H-34288-4/2
PTFB212503EL
Package H-33288-6
Features
2
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
Wide video bandwidth
Typical single-carrier WCDMA performance at 2170 MHz,
30 V, I
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P1
- Efficiency = 54 %
Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
Integrated ESD protection: Human Body Model, Class 2
(minimum)
Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
Pb-free, RoHS-compliant
= 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
Symbol
IMD
G
h
DQ
ps
D
= 1.85 A, 3GPP signal, channel bandwidth =
Min
dB
= 240 W
Typ
18.0
–33
31
PTFB212503EL
PTFB212503FL
Rev. 07, 2010-11-04
Max
Unit
dBc
dB
%

Related parts for PTFB212503FL V2 R250

PTFB212503FL V2 R250 Summary of contents

Page 1

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz ...

Page 2

... Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (T = 70°C, 200 W CW) CASE Ordering Information Type and Version Package Outline PTFB212503EL V1 H-33288-6 PTFB212503EL V1 R250 H-33288-6 PTFB212503FL V2 H-34288-4/2 PTFB212503FL V2 R250 H-34288-4/2 Data Sheet Symbol Conditions Symbol (BR)DSS ...

Page 3

Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive- 1.85 A, 3GPP signal PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -25 ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive- 1. ƒ = 2170 MHz, ƒ = 2169 MHz 1 2 -20 -25 Efficiency -30 -35 -40 -45 -50 -55 -60 -65 ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance 1.85 A, ƒ = 2170 MHz +25°C Efficiency +85° –10° Gain ...

Page 6

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source G Z Source W Frequency MHz R 2080 2.42 –5.57 2110 2.31 –5.36 2140 2.21 –5.15 2170 2.12 –4.96 2200 2.04 –4.77 See next page for reference circuit information Data Sheet ...

Page 7

Confidential, Limited Internal Distribution Reference Circuit Out C801 1000 pF R802 100 Ohm C803 R804 1000 pF 1200 Ohm ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description PTFB212503EL or PTFB212503FL DUT 0.508 mm [.020"] thick, PCB Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Input TL101 0.043 l, 54.17 W TL102 0.107 l, 63.89 W 0.044 l, 63.89 ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Output 0.054 l, 4.84 W TL201 0.016 l, 28.85 W TL202, TL203 TL204 0.078 l, 39.51 W 0.032 l, 16.90 W TL205 TL206 0.032 ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information LTN/PTFB212503EF Test Fixture Part No. Find Gerber files for this test fixture on the Infineon Web site at RO4350, .020 C802 C801 S3 R802 R803 R801 S2 R102 C104 C105 ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Components Information Component Description Input C101 Chip capacitor, 7.5 pF C102 Chip capacitor, 2.4 pF C103, C104 Chip capacitor C105, C106 Chip capacitor, 4.7 µF C801, C802, C803 Capacitor, 1000 pF ...

Page 12

Confidential, Limited Internal Distribution Package Outline Specifications 4X R1.524 [R.060] 2X R1.626 [R.064] 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. ...

Page 13

Confidential, Limited Internal Distribution Package Outline Specifications 45° X 2.032 [45° X .080] 2X 30° +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME ...

Page 14

... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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