PTFB212503FL V2 R250 Infineon Technologies, PTFB212503FL V2 R250 Datasheet - Page 5

• Manufacturer Part Number: PTFB212503FL V2 R250
• Description: RF MOSFET Power RF LDMOS FETs 240W 2110-2170 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB212503FL V2 R250

• Lead Free Status / Rohs Status: No
• Other names: FB212503FLV2R25NT

Confidential, Limited Internal Distribution
Data Sheet
Typical Performance
-20
-30
-40
-50
-60
-70
-80
21
20
19
18
17
16
15
V
35
33
DD
Gain
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
= 30 V, I
+25°C
+85° C
–10° C
V
35
DD
IM3
= 30 V, I
Single-carrier WCDMA
37
40
DQ
Output Power (dBm)
Output Power (dBm)
CW Performance
39
= 1.85 A ƒ = 2170 MHz, 3GPP
DQ
41
= 1.85 A, ƒ = 2170 MHz
45
(cont.)
43
Efficiency
45
Efficiency
50
47
49
55
51
60
50
40
30
20
10
0
60
50
40
30
20
10
0
5 of 14
19
18
17
16
60
55
50
45
40
35
30
25
20
15
10
1960
Single-carrier WCDMA, 3GGP Broadband
35
Gain
Efficiency
IM3
I
I
DQ
I
DQ
DQ
V
2020
DD
= 1.85 A
= 1.30 A
= 2.11 A
= 30 V, I
Gain vs. Output Power
V
40
DD
Output Power (dBm)
CW Performance
2080
= 30 V, ƒ = 2170 MHz
Frequency (MHz)
DQ
= 1.85 A, P
2140
45
2200
PTFB212503EL
PTFB212503FL
O UT
50
Rev. 07, 2010-11-04
= 63 W
2260
RL
2320
55
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50