MC9S08GW64CLK Freescale Semiconductor, MC9S08GW64CLK Datasheet - Page 40

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MC9S08GW64CLK

Manufacturer Part Number
MC9S08GW64CLK
Description
S08 8bit Microcontroller
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets

Specifications of MC9S08GW64CLK

Core Processor
HCS08
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LCD, PWM, WDT
Number Of I /o
45
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 16x16b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Processor Series
MC9S08GW64
Core
S08
Data Bus Width
8 bit
Data Ram Size
4032 B
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
57
Number Of Timers
3
Operating Supply Voltage
- 0.3 V to + 3.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 85 C
Supply Current (max)
60 uA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S08GW64CLK
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Electrical Characteristics
3.14
3.15
This section provides details about program/erase times and program-erase endurance for the FLASH memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
40
1
1
C
D
D
D
D
D
D
D
V
The frequency of this clock is controlled by a software setting.
IREG
C
D
D
D
D
P
P
P
P
D
D
C
C
LCD Frame Frequency
LCD Charge Pump Capacitance
LCD Bypass Capacitance
LCD Glass Capacitance
V
V
V
IREG
IREG
IREG
Max can not exceed V
LCD Specifications
FLASH Specifications
Supply voltage for program/erase
-40C to 85C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
T
T = 25C
TRIM Resolution
Ripple
L
to T
H
= –40C to + 85C
Characteristic
5
2
2
3
Characteristic
DD
3
-0.15 V
1
4
MC9S08GW64 Series MCU Data Sheet, Rev. 3
Table 21. LCD Electricals, 3-V Glass
Table 22. FLASH Characteristics
2
2
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
Symbol
C
10,000
V
f
C
C
Frame
BYLCD
Min
150
RTRIM
1.8
1.8
IREG
15
glass
LCD
5
100,000
Typical
1.49
Min
20,000
.89
1.5
28
4000
100
9
4
4
6
DD
2000
1.00
1.67
Typ
100
100
30
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
1.85
8000
Max
1.15
100
100
.15
58
.1
1
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
V
Unit
Hz
IREG
nF
nF
pF
%
V
V

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