STF18N55M5 STMicroelectronics, STF18N55M5 Datasheet - Page 5

• Manufacturer Part Number: STF18N55M5
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1352pF @ 100V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
SD
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
t
rr
rr
c
r
f
rr
rr
(2)
(1)
Turn-off delay time
Rise time
Cross time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17078 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 13 A, V
= 13 A, di/dt = 100 A/µs
= 13 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
20)
18,
GS
D
GS
j
Figure
= 150 °C
= 9 A,
= 0
= 10 V
Figure
23)
20)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
23.5
Typ.
238
278
2.8
3.3
9.5
24
29
23
13
Max. Unit
Max
1.5
13
52
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/22
A
A
V
A
A