STL40DN3LLH5 STMicroelectronics, STL40DN3LLH5 Datasheet - Page 4

• Manufacturer Part Number: STL40DN3LLH5
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL40DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Lead Free Status / Rohs Status: Details

Electrical characteristics
2
4/11
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
GS(th)
DS(on)
C
Q
Q
GSS
DSS
Q
oss
rss
iss
gd
gs
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 18416 Rev 1
V
V
V
(see
I
V
V
V
V
V
V
D
DS
DD
GS
GS
GS
GS
DS
DS
DS
= 250 µA, V
=15 V, I
= V
= 10 V, I
= 4.5 V, I
=25 V, f=1 MHz, V
=4.5 V
= Max rating,
= Max rating @125 °C
= ± 22 V
Figure
Test conditions
Test conditions
GS
, I
D
D
3)
D
D
= 11 A
= 5.5 A
= 250 µA
= 5.5 A
GS
= 0
GS
=0
Min.
Min.
30
1
-
-
0.016
Typ.
0.02
Typ.
475
1.5
4.5
1.7
1.9
97
19
STL40DN3LLH5
Max.
0.018
0.025
Max.
±
100
10
-
-
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
Ω
V
V