PSMN1R5-30YLC,115 NXP Semiconductors, PSMN1R5-30YLC,115 Datasheet - Page 11

MOSFET Power N-Ch 30V 1.55mOhms

PSMN1R5-30YLC,115

Manufacturer Part Number
PSMN1R5-30YLC,115
Description
MOSFET Power N-Ch 30V 1.55mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PSMN1R5-30YLC,115

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.55 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
179 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
65 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.55 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
4044pF @ 15V
Power - Max
179W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
 Details
Other names
934065188115
NXP Semiconductors
8. Package outline
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
PSMN1R5-30YLC
Product data sheet
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
0.25
0.19
M
Rev. 2 — 17 May 2011
c
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
PSMN1R5-30YLC
detail X
6.2
5.8
H
PROJECTION
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2011. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
06-03-16
11-03-25
3
y C
0.1
y
θ
SOT669
θ
11 of 15

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