BSM50GX120DN2

Manufacturer Part NumberBSM50GX120DN2
ManufacturerInfineon Technologies
BSM50GX120DN2 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (255Kb)Embed
Next
BSM 50 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
V
I
Package
CE
C
1200V 78A
HALF-BRIDGE 1
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
Ordering Code
C67076-A2105-A70
Values
Unit
1200
V
1200
± 20
A
78
50
156
100
W
400
+ 150
°C
-40 ... + 125
0.3
K/W
0.6
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
Oct-21-1997