BSM50GX120DN2 Infineon Technologies, BSM50GX120DN2 Datasheet

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BSM50GX120DN2

Manufacturer Part Number
BSM50GX120DN2
Description
Manufacturer
Infineon Technologies
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GX120DN2
Manufacturer:
EUPEC
Quantity:
25
Price:
BSM 50 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 78A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67076-A2105-A70
+ 150
± 20
1200
1200
2500
156
100
400
F
78
50
20
11
0.3
0.6
Oct-21-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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