MT18HTF25672AZ-80EH1 Micron Technology Inc, MT18HTF25672AZ-80EH1 Datasheet

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MT18HTF25672AZ-80EH1

Manufacturer Part Number
MT18HTF25672AZ-80EH1
Description
MODULE DDR2 SDRAM 2GB 240UDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18HTF25672AZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
800MT/s
Features
-
Package / Case
240-UDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR2 SDRAM UDIMM
MT18HTF12872AZ – 1GB
MT18HTF25672AZ – 2GB
MT18HTF51272AZ – 4GB
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-8500, PC2-6400,
• 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Supports ECC error detection and correction
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83c6d17f
htf18c128_256_512x72az.fm - Rev. C 12/10 EN
PC2-5300, PC2-4200, or PC2-3200
Meg x 72)
operation
Speed
Grade
-1GA
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= 1.7–3.6V
Nomenclature
1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM UDIMM
CL = 7
1066
t
CK
CL = 6
800
800
800
Data Rate (MT/s)
CL = 5
667
800
667
667
1
Figure 1: 240-Pin UDIMM (MO-237 R/C G)
Module height: 30mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CL
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
CL = 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
533
533
533
553
553
400
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
module offerings.
CL = 3
400
400
400
400
400
400
2
A
13.125
A
t
(ns)
12.5
RCD
≤ +85°C)
≤ +70°C)
15
15
15
15
© 2009 Micron Technology, Inc. All rights reserved.
1
13.125
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-1GA
-80E
-800
-667
58.125
(ns)
57.5
t
Z
I
60
60
55
55
RC

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MT18HTF25672AZ-80EH1 Summary of contents

Page 1

... DDR2 SDRAM UDIMM MT18HTF12872AZ – 1GB MT18HTF25672AZ – 2GB MT18HTF51272AZ – 4GB Features • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18HTF25672AZ-667H1. PDF: 09005aef83c6d17f htf18c128_256_512x72az.fm - Rev. C 12/10 EN ...

Page 3

Pin Assignments Table 6: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83c6d17f ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0 DQS0 DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DM DQ8 DQ DQ9 ...

Page 7

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 8

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...

Page 10

IDD Specifications Table 10: DDR2 I Specifications and Conditions – 1GB (Die Revision G) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating ...

Page 11

Table 10: DDR2 I Specifications and Conditions – 1GB (Die Revision G) (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank ...

Page 12

Table 11: DDR2 I Specifications and Conditions – 2GB (Die Revisions E and G) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet ...

Page 13

Table 12: DDR2 I Specifications and Conditions – 2GB (Die Revision H) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Active ...

Page 14

Table 13: DDR2 I Specifications and Conditions – 4GB (Die Revision C) (Continued) DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Precharge ...

Page 15

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 16

Module Dimensions Figure 3: 240-Pin DDR2 UDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.68 (2.78) TYP 45° (4X) U11 U12 3.05 (0.12) ...

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