BDP954E6327 Infineon Technologies, BDP954E6327 Datasheet - Page 2

• Manufacturer Part Number: BDP954E6327
• Manufacturer: Infineon Technologies

Specifications of BDP954E6327

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 120V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Power Dissipation: 5W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Junction - soldering point
Maximum Ratings
Parameter
Collector-emitter voltage
BDP948
BDP950
BDP954
Collector-base voltage
BDP948
BDP950
BDP954
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
For calculation of R thJA please refer to Application Note Thermal Resistance
S
≤ 100 °C
p
2)
≤ 10 ms
2
Symbol
R
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
CEO
CBO
EBO
tot
j
stg
thJS
BDP948, BDP950, BDP954
-65 ... 150
Value
Value
≤ 10
100
120
200
500
150
45
60
45
60
5
3
5
5
2008-10-10
Unit
K/W
Unit
V
A
mA
W
°C