BDP954E6327 Infineon Technologies, BDP954E6327 Datasheet - Page 5

• Manufacturer Part Number: BDP954E6327
• Manufacturer: Infineon Technologies

Specifications of BDP954E6327

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 120V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Power Dissipation: 5W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Collector cutoff current I
V
Total power dissipation P
CB
10
10
nA
10
10
10
10
10
W
= 45 V
5.5
4.5
3.5
2.5
1.5
0.5
-1
4
3
2
1
0
5
4
3
2
1
0
0
0
15
20
30
max
40
45
60
60
75
80
CBO
90 105 120 °C
tot
100
= ƒ (T
= ƒ (T
typ
120 °C
S
)
A
T
t
s
A
)
150
150
5
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load R
10
425
pF
350
300
250
200
150
100
10
10
10
50
-1
0
2
1
0
10
0
-6
BDP948, BDP950, BDP954
10
4
-5
10
8
-4
CEB
10
12
-3
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
eb
10
16
-2
cb
2008-10-10
= ƒ (t
= ƒ (V
= ƒ (V
V
s
V
tp
EB
p
CB
)
CCB
CB
)
(V
22
10
)
EB
0
)