HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet
HAT2022R-EL
Specifications of HAT2022R-EL
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HAT2022R-EL Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.12.00 Sep 07, 2005 page REJ03G1158-1200 (Previous: ADE-208-440J) Rev.12.00 Sep 07, 2005 ...
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... HAT2022R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 40 Electrical Characteristics Item Drain to source breakdown voltage ...
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... HAT2022R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.4 ...
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... HAT2022R Static Drain to Source on State Resistance vs. Temperature 0.05 Pulse Test 0. 0.02 0. – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ 0.2 0 Reverse Drain Current I Dynamic Input Characteristics Gate Charge Rev.12.00 Sep 07, 2005 page 120 160 Tc (° 25° ...
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... HAT2022R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.12.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 50 Pulse Test – 0.4 0.8 1.2 Source to Drain Voltage V θ ...
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... Index mark Ordering Information Part Name HAT2022R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.12.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g Terminal cross section ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...