HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet - Page 4

• Manufacturer Part Number: HAT2022R-EL
• Manufacturer: Renesas Electronics America
• Type: Power MOSFETr

Specifications of HAT2022R-EL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 11A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

HAT2022R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.12.00 Sep 07, 2005 page 2 of 6
2. When using the glass epoxy board (FR4 40
3. Pulse test
10 s, duty cycle
Item
Item
1%
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Symbol
40
V
V
Tstg
Min
Tch
1.0
30
12
I
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
D
Note 2
Note 1
1.6 mm), PW
0.012
0.017
1450
Typ
950
380
450
160
0.8
18
60
80
70
—
—
—
—
—
0.015
0.025
Max
2.0
1.3
10
—
—
—
—
—
—
—
—
—
—
—
10
10 s
–55 to +150
Value
150
2.5
Unit
30
11
88
11
20
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
GS
GS
DD
F
= 11 A, V
= 11 A, V
= 10 mA, V
= 6 A, V
= 6 A, V
= 6 A, V
= 100 A, V
/dt = 20 A/ s
= 30 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 4 V, I
Test Conditions
10 V
GS
GS
DS
D
GS
GS
D
= 10 V
= 10 V
= 4 V
= 6 A,
GS
GS
= 0
= 0
= 1 mA
DS
DS
Unit
= 0
= 0
(Ta = 25 C)
(Ta = 25 C)
W
V
V
A
A
A
= 0
C
C
Note 3
= 0
Note 3
Note 3
Note 3