HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet - Page 3

• Manufacturer Part Number: HAT2022R-EL
• Manufacturer: Renesas Electronics America
• Type: Power MOSFETr

Specifications of HAT2022R-EL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 11A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

HAT2022R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.12.00 Sep 07, 2005 page 1 of 6
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
4
D
5 6 7 8
S S S
1 2 3
D D D
1, 2, 3
4
5, 6, 7, 8
(Previous: ADE-208-440J)
REJ03G1158-1200
Source
Gate
Drain
Sep 07, 2005
Rev.12.00