HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet - Page 5

• Manufacturer Part Number: HAT2022R-EL
• Manufacturer: Renesas Electronics America
• Type: Power MOSFETr

Specifications of HAT2022R-EL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 11A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

HAT2022R
Main Characteristics
Rev.12.00 Sep 07, 2005 page 3 of 6
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
2
2
10 V
50
6 V
4.5 V
5 V
4
4
100
6
6
V
I
D
GS
= 10 A
2 A
5 A
150
Pulse Test
Pulse Test
Ta (°C)
V
= 2.5 V
V
8
8
GS
DS
3.5 V
4 V
3 V
(V)
(V)
200
10
10
0.005
0.002
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.2
0.1
30
10
20
16
12
3
1
8
4
0
0.1
0.5
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
Pulse Test
Note 4:
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
DS
0.3
1
Tc = 75°C
= 10 V
Drain Current
1
vs. Drain Current
2
1
DS (on)
2
V
GS
3
5
= 4 V
10 V
3
10
I
10
–25°C
D
25°C
(A)
V
V
20
4
30
GS
DS
100 µs
10 µs
(V)
(V)
100
50
5