TEA1112AT NXP Semiconductors, TEA1112AT Datasheet - Page 13

• Manufacturer Part Number: TEA1112AT
• Manufacturer: NXP Semiconductors

Specifications of TEA1112AT

• Max Transmitter Gain: 53dB
• Receiver Gain (max): 32.7dB
• Operating Temp Range: -25C to 75C
• Package Type: SSOP
• Pin Count: 16
• Operating Current: 1.15mA
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
1997 Mar 26
Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A)
V
V
I
Receiving amplifier (pins IR, QR and GAR)
G
V
V
Automatic gain control (pin AGC)
I
SYMBOL
MMUTE
start
Z
G
G
G
G
G
IL
IH
o(rms)
norx(rms)
Low voltage versatile telephone
transmission circuits with dialler interface
vrx
i
vtxm
vrx(f)
vrx(T)
vrxr
vtrx
gain reduction in microphone MUTE
mode
LOW level input voltage
HIGH level input voltage
input current
input impedance
voltage gain from IR to QR
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
gain voltage reduction range
maximum receiving signal (RMS
value)
noise output voltage at pin QR (RMS
value)
gain control range for microphone
and receiving amplifiers with
respect to I
highest line current for maximum gain
line
PARAMETER
= 15 mA
input level = HIGH
V
f = 300 to 3400 Hz
T
external resistor
connected between
GAR and QR
I
R
I
R
IR open-circuit;
R
psophometrically weighted
(P53 curve)
I
p
p
line
amb
IR
L
L
L
= 0 mA sine wave drive;
= 0 mA sine wave drive;
= 150 ; THD = 2%
= 450 ; THD = 2%
= 150 ;
= 6 mV (RMS)
= 85 mA
= 25 to +75 C
CONDITIONS
13
V
V
29.7
EE
EE
MIN.
+ 1.5
TEA1112; TEA1112A
0.4
80
1.25
20
31.2
0.25
0.35
5.8
26
TYP.
0.2
0.3
86
Product specification
V
V
3
32.7
12
EE
CC
MAX.
+ 0.3 V
+ 0.4 V
dB
k
dB
dB
dB
dB
V
V
dBVp
dB
mA
UNIT
A