PHP225 NXP Semiconductors, PHP225 Datasheet - Page 4

• Manufacturer Part Number: PHP225
• Description: Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHP225

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP225
Product data sheet
Symbol
R
Fig 1.
Fig 3.
th(j-sp)
R
(K/W)
th j-s
10
P
(W)
10
2.5
2.0
1.5
1.0
0.5
tot
10
−1
1
2
0
10
Power derating curve
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
0
−6
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
50
0.05
0.75
0.33
0.02
0.01
0.5
0.1
0.2
δ =
10
0
−5
100
150
All information provided in this document is subject to legal disclaimers.
10
T
s
−4
(°C)
mlb836
200
Rev. 04 — 17 March 2011
Conditions
see
10
Figure 3
−3
Fig 2.
−10
−10
−10
(A)
I
−10
D
−1
−10
−1
−2
2
δ = 0.01
T
(1) R
SOAR; P-channel
−1
s
P
= 80 °C.
DSon
10
Dual P-channel intermediate level FET
t
p
−2
T
limitation.
δ =
−1
(1)
T
t
p
t
Min
-
10
P
−1
DC
−10
Typ
-
t
p
V
t
p
T
© NXP B.V. 2011. All rights reserved.
DS
(s)
PHP225
(V)
10 μs
1 ms
0.1 s
δ =
mbe155
mbe153
t
Max
35
p
=
t
T
t
−10
p
1
2
Unit
K/W
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