BLS2731-110 NXP Semiconductors, BLS2731-110 Datasheet

BLS2731-110

Manufacturer Part Number
BLS2731-110
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-110

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
75V
Collector-base Voltage
75V
Emitter-base Voltage
2V
Dc Current Gain (min)
40
Power Dissipation
500W
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-423A
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLS2731-110
Manufacturer:
NXP
Quantity:
36 000
Part Number:
BLS2731-110
Manufacturer:
NXP
Quantity:
1 400
Part Number:
BLS2731-110
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BLS2731-110T
Manufacturer:
COILCRAFT
Quantity:
60 000
Product specification
Supersedes data of 1998 Jan 30
book, halfpage
DATA SHEET
BLS2731-110
Microwave power transistor
M3D260
DISCRETE SEMICONDUCTORS
2001 Dec 05

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BLS2731-110 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D260 BLS2731-110 Microwave power transistor Product specification Supersedes data of 1998 Jan 30 2001 Dec 05 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2001 Dec 05 PINNING - SOT423A dbook, halfpage (GHz) (V) 2.7 to 3.1 40 WARNING 2 Product specification BLS2731-110 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK052 Fig.1 Simplified outline. ...

Page 3

... CONDITIONS mA; open emitter mA 1 (GHz) (V) 2.7 to 3.1 40 2.7 to 2.9 40 2 Product specification BLS2731-110 MIN. MAX 500 mb 65 +200 200 235 VALUE 0.24 MIN. MAX 0.6 40 100 (W) (dB) 110 7 typ. 130 typ. 8 typ. 120 typ. 7.5 UNIT ...

Page 4

... C 120 100 3.1 f (GHz Fig.3 MGM538 handbook, halfpage 3.2 f (GHz Fig.5 4 Product specification BLS2731-110 2.9 GHz class- 100 s; = 10%. p Load power as a function of drive power; typical values 2.6 2 class- 110 W. L Load impedance as function of frequency (series components); typical values. ...

Page 5

... The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 2001 Dec Product specification BLS2731-110 L11 C2 RC L10 L9 C1 output ...

Page 6

... American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with Duroid dielectric ( 2001 Dec 05 DESCRIPTION 100 Product specification BLS2731-110 VALUE DIMENSIONS length 4.5 mm width 10 mm length 2.5 mm width 16.4 mm length 8.3 mm width 1 mm length 8 mm width 1 ...

Page 7

... F H 12.83 8.84 10.29 1.58 19.81 12.57 8.56 10.03 1.47 18.29 0.505 0.348 0.405 0.062 0.78 0.495 0.337 0.395 0.058 0.72 REFERENCES JEDEC EIAJ 7 Product specification BLS2731-110 3.43 3.35 22.99 9.91 16.51 3.18 2.95 22.73 9.65 0.135 0.132 0.905 0.390 ...

Page 8

... CAUTION 8 Product specification BLS2731-110 DEFINITIONS These products are not Philips Semiconductors ...

Page 9

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 9 Product specification BLS2731-110 ...

Page 10

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 10 Product specification BLS2731-110 ...

Page 11

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 11 Product specification BLS2731-110 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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