IPD13N03LA Infineon Technologies, IPD13N03LA Datasheet
IPD13N03LA
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IPD13N03LA Summary of contents
Page 1
... P-TO252-3-23 P-TO251-3-11 13N03LA 13N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA 12.8 mΩ IPU13N03LA P-TO251-3-1 13N03LA Value Unit 210 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...
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... GSS =4 =20 A DS( |>2 DS(on)max = =3.2 K/W the chip is able to carry 47 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G Values Unit min. typ. max 3.2 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 17.5 21.9 mΩ ...
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... g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G Values Unit min. typ. max. - 784 1043 pF - 303 402 - 5.4 8 4.6 6 2.6 3.9 - 2.7 3 1.3 1.7 - 1.8 2.7 - 3.3 4.7 - 6.3 8 5.5 7 6.6 8 210 - 0.95 1 ...
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... V Rev. 2.2 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ µs 100 µ 100 10 [V] DS page 4 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 ...
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... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter 175 ° Rev. 2.2 6 Typ. drain-source on resistance R =f(I DS(on) parameter 4 4 Typ. forward transconductance g =f ° [V] GS page 5 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA =25 ° 4.1 V 3.5 V 3 [A] D =25 ° [ 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 100 10 Crss 0.0 [V] DS page 6 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA 200 µA 20 µA - 100 140 T [° °C 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 2.0 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.2 14 Typ. gate charge V =f(Q GS parameter ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO252-3-11 page 8 IPF13N03LA G IPU13N03LA G 2008-04-14 ...
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... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO252-3-23 page 9 IPF13N03LA G IPU13N03LA G 2008-04-14 ...
Page 10
... Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO251-3-11 page 10 IPF13N03LA G IPU13N03LA G 2008-04-14 ...
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... Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO251-3-21 page 11 IPF13N03LA G IPU13N03LA G 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 IPD13N03LA G IPS13N03LA G page 12 IPF13N03LA G IPU13N03LA G ...