IPD13N03LA Infineon Technologies, IPD13N03LA Datasheet - Page 7

• Manufacturer Part Number: IPD13N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD13N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0128Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 46W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
29
28
27
26
25
24
23
22
21
20
AV
1
-60
=f(T
); R
1
150 °C
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
20
100 °C
t
T
AV
j
60
[°C]
[µs]
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
2
D
IPS13N03LA G
=25 A pulsed
IPD13N03LA G
g s
4
Q
Q
6
gate
g
Q
sw
[nC]
Q
8
g d
5 V
IPU13N03LA G
IPF13N03LA G
10
20 V
15 V
12
Q
g ate
2008-04-14
14