IPD13N03LA Infineon Technologies, IPD13N03LA Datasheet - Page 5

• Manufacturer Part Number: IPD13N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD13N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0128Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 46W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
60
50
40
30
20
10
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
10 V
1
D
|R
1
DS(on)max
2
V
V
175 °C
DS
GS
[V]
[V]
3
2
25 °C
4
2.8 V
3.5 V
3.8 V
4.1 V
3.2 V
3 V
4.5 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
50
40
30
20
10
50
40
30
20
10
D
=f(I
0
0
); T
0
0
3 V
D
3.2 V
j
); T
=25 °C
GS
10
j
=25 °C
IPS13N03LA G
IPD13N03LA G
10
3.5 V
20
3.8 V
20
I
I
D
D
30
[A]
[A]
30
4.1 V
40
IPU13N03LA G
IPF13N03LA G
40
50
4.5 V
10 V
2008-04-14
50
60