S29AL016D90TFI02 Spansion Inc., S29AL016D90TFI02 Datasheet - Page 4

• Manufacturer Part Number: S29AL016D90TFI02
• Manufacturer: Spansion Inc.

Specifications of S29AL016D90TFI02

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

General Description
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The S29AL016D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words.
The device is offered in 48-ball FBGA, and 48-pin TSOP packages. The word-wide data (x16) appears on
DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-
system with the standard system 3.0 volt V
erase operations. The device can also be programmed in standard EPROM programmers.
The device offers access times of 70 ns and 90 ns allowing high speed microprocessors to operate without
wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
The S29AL016D is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write
cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,
or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been
completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low V
during power transitions. The hardware sector protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both these modes.
Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
S29AL016D
CC
D a t a
supply. A 12.0 V V
CC
S h e e t
detector that automatically inhibits write operations
PP
or 5.0 V
S29AL016D_00_A8 February 27, 2009
CC
are not required for write or