AM29F010-45PC Spansion Inc., AM29F010-45PC Datasheet - Page 11

• Manufacturer Part Number: AM29F010-45PC
• Manufacturer: Spansion Inc.

Specifications of AM29F010-45PC

• Cell Type: NOR
• Density: 1Mb
• Access Time (max): 45ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 17b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: PDIP
• Program/erase Volt (typ): 4.75 to 5.25V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.75V
• Operating Supply Voltage (max): 5.25V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 30mA
• Mounting: Through Hole
• Pin Count: 32
• Lead Free Status / Rohs Status: Not Compliant

Note: See the appropriate Command Definitions table for
program command sequence.
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. The Command
Definitions table shows the address and data require-
ments for the chip erase command sequence.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored.
The system can determine the status of the erase
operation by using DQ7 or DQ6. See “Write Opera-
tion Status” for information on these status bits.
When the Embedded Erase algorithm is complete,
Increment Address
Figure 1. Program Operation
in progress
Embedded
algorithm
Program
No
Command Sequence
Write Program
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
Yes
Yes
16736G-7
No
Am29F010
the device returns to reading array data and ad-
dresses are no longer latched.
Figure 2 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector
Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two un-
lock cycles, followed by a set-up command. Two addi-
tional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sec-
tor erase command sequence.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 50 s begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time be-
tween these additional cycles must be less than 50 s,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 s, the
system need not monitor DQ3. Any command during
the time-out period resets the device to reading
array data. The system must rewrite the command se-
quence and any additional sector addresses and com-
mands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7 or DQ6. Refer
to “Write Operation Status” for information on these
status bits.
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