TE28F160S570 Intel, TE28F160S570 Datasheet - Page 22

• Manufacturer Part Number: TE28F160S570
• Manufacturer: Intel

Specifications of TE28F160S570

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

28F160S5/28F320S5
4.2.6
This field provides critical details of the flash
device geometry.
22
27h
28h
2Ah
2Ch
2Dh
Offset
DEVICE GEOMETRY DEFINITION
01h
02h
02h
01h
04h
Length
(bytes)
Device Size = 2
Flash Device Interface Description
Maximum Number of Bytes in Write Buffer
= 2
Number of Erase Block Regions within
Device:
Erase Block Region Information
bits 15–0 = y, where y+1 = number of
erase blocks of identical size within
region.
bits 31–16 = z, where the erase block(s)
within this region are z
the number of “256-Byte” clusters in an
erase block.
N
bits 7–0 = x = # of regions within the
value
0002h
device containing one or more
contiguous Erase Blocks of the
same size.
Table 10. Device Geometry Definition
Description
N
in Number of Bytes
meaning
x8/x16 asynchronous
256 Bytes. z is
27:
28:
29:
2A:
2B:
2C:
y:
(1Fh+1=32 blocks)
z:
(100h = 256,
256 x 256 = 64 KB)
(15h = 21d, 2
2097152 bytes =
2 MB = 16 Mb)
2D:
2E:
2F:
30:
28F160S5
0015h
0002h
0000h
0005h
0000h
(2
0001h
5
001Fh
0000h
0000h
0001h
= 32)
PRELIMINARY
21
=
27:
28:
29:
2A:
2B:
2C:
y:
(3Fh+1=64 blocks)
z:
(100h = 256,
256 x 256= 64 KB)
(16h = 22d, 2
4194304 bytes
= 4 MB = 32 Mb)
2F:
30:
2D: 003Fh
2E:
28F320S5
0016h
0002h
0000h
0005h
0000h
(2
0001h
5
0000h
0000h
0001h
= 32)
22
=