BC847BPN NXP Semiconductors, BC847BPN Datasheet

BC847BPN

Manufacturer Part Number
BC847BPN
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC847BPN

Transistor Polarity
NPN/PNP
Number Of Elements
2
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Power Dissipation
200mW
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / Rohs Status
Compliant

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1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
Table 1.
Table 2.
Symbol
Per transistor; for the PNP transistor with negative polarity
V
I
h
Pin
1
2
3
4
5
6
C
FE
CEO
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Conditions
open base
V
CE
= 5 V; I
C
= 2 mA
Simplified outline
1
6
Min
-
-
200
5
2
3
4
Typ
-
-
-
Product data sheet
Graphic symbol
TR1
Max
45
100
450
6
1
sym019
5
2
Unit
V
mA
4
3
TR2

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BC847BPN Summary of contents

Page 1

... BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain ...

Page 2

... T amb total power dissipation T amb junction temperature ambient temperature storage temperature Rev. 04 — 18 February 2009 BC847BPN [1] Marking code 13* Min Max - 100 - 200 - 200 [ 220 ...

Page 3

... Per device: Power derating curves SOT363 (SC-88) Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point thermal resistance from in free air junction to ambient Rev. 04 — 18 February 2009 BC847BPN 006aab419 25 75 125 175 amb 2 Min Typ [1] ...

Page 4

... FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 BC847BPN 006aab420 (s) p 006aab421 (s) p © NXP B.V. 2009. All rights reserved ...

Page 5

... mA saturation voltage base-emitter voltage mA TR1 (NPN) TR2 (PNP) collector capacitance MHz TR1 (NPN) TR2 (PNP) emitter capacitance MHz TR1 (NPN) TR2 (PNP) transition frequency mA 100 MHz 300 s; 0.02. p Rev. 04 — 18 February 2009 BC847BPN Min Typ = 200 - 755 580 655 ...

Page 6

... Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mgt727 ( (mA) C Fig 5. mgt728 V BEsat ( (mA) C Fig 7. Rev. 04 — 18 February 2009 BC847BPN 0.20 I (mA 3.2 2.4 0.15 1.6 0.8 0.10 0. amb TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 1.2 1.0 (1) 0 ...

Page 7

... BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 (Hz (mA Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values Rev. 04 — 18 February 2009 BC847BPN 006aab424 (mA MHz amb © NXP B.V. 2009. All rights reserved ...

Page 8

... V, 100 mA NPN/PNP general-purpose transistor 006aab425 ( (mA) C Fig 11. TR2 (PNP): Collector current as a function of mld700 V BEsat (mV (mA) C Fig 13. TR2 (PNP): Base-emitter saturation voltage as Rev. 04 — 18 February 2009 BC847BPN 0.20 I (mA 2.8 2.1 0.15 1.4 0.7 0.10 0. amb collector-emitter voltage; typical values 1200 1000 ...

Page 9

... BC847BPN_4 Product data sheet 45 V, 100 mA NPN/PNP general-purpose transistor mld701 (Hz (mA Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values Rev. 04 — 18 February 2009 BC847BPN 006aab427 (mA MHz amb © NXP B.V. 2009. All rights reserved ...

Page 10

... Dimensions in mm Packing methods SOT363 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 04 — 18 February 2009 BC847BPN 1.1 0 0.25 0.3 0.10 0.2 06-03-16 [1] Packing quantity 3000 [2] -115 ...

Page 11

... V, 100 mA NPN/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 04 — 18 February 2009 BC847BPN 0 0 Dimensions in mm 1.5 0.3 2.5 1.5 Dimensions in mm direction during soldering solder lands solder resist solder paste occupied area sot363_fr solder lands solder resist ...

Page 12

... Product specification Preliminary specification Preliminary specification Rev. 04 — 18 February 2009 BC847BPN Change notice Supersedes - BC847BPN_3 - BC847BPN_2 - BC847BPN_1 - - © NXP B.V. 2009. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 18 February 2009 BC847BPN © NXP B.V. 2009. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC847BPN All rights reserved. Date of release: 18 February 2009 Document identifier: BC847BPN_4 ...

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